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IXTA 1N100
IXTP 1N100
Symbol
Test Conditions
Characteristic Values
TO-220 AD Dimensions
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
g fs
C iss
C oss
C rss
t d(on)
t r
V DS = 20 V; I D = 1.0A, pulse test
V GS = 0 V, V DS = 25 V, f = 1 MHz
V GS = 10 V, V DS = 0.5 ? V DSS , I D = 1A
0.8
1.5
400
37
13
18
19
S
pF
pF
pF
ns
ns
t d(off)
t f
R G
= 18 ?, (External)
20
18
ns
ns
Q g(on)
Q gs
V GS = 10 V, V DS = 0.5 ? V DSS , I D = 1A
14.5
3.0
nC
nC
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
Bottom Side
Q gd
R thJC
7.5
2.3
nC
K/W
R thCK
(IXTP)
0.50
K/W
Source-Drain Diode
Characteristic Values
Symbol
Test Conditions
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
I S
I SM
V GS = 0 V
Repetitive; pulse width limited by T JM
1.5
6
A
A
V SD
t rr
I F = I S , V GS = 0 V,
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
I F = I S , -di/dt = 100 A/ μ s, V R = 100 V
710
1.8
V
ns
TO-263 AA Outline
1.
2.
3.
4.
Gate
Drain
Source
Drain
Bottom Side
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
4.06
2.03
0.51
1.14
0.46
1.14
8.64
7.11
9.65
6.86
2.54
14.61
2.29
1.02
1.27
0
0.46
4.83
2.79
0.99
1.40
0.74
1.40
9.65
8.13
10.29
8.13
BSC
15.88
2.79
1.40
1.78
0.38
0.74
.160
.080
.020
.045
.018
.045
.340
.280
.380
.270
.100
.575
.090
.040
.050
0
.018
.190
.110
.039
.055
.029
.055
.380
.320
.405
.320
BSC
.625
.110
.055
.070
.015
.029
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
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